IRFS4321PBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET Power MOSFET

IRFS_SL4321PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
Gate Threshold Voltage
I_DSS
Drain-to-Source Leakage Current
I_GSS
R_G(int)
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min.
150
–––
–––
3.0
–––
–––
–––
–––
–––
Typ.
–––
150
12
–––
–––
–––
–––
–––
0.8
Max. Units
Conditions
––– V V_GS = 0V, I_D = 250µA
––– mV/°C Reference to 25°C, I_D = 1mAd
15 mΩ V_GS = 10V, I_D = 33A f
5.0 V V_DS = V_GS, I_D = 250µA
20 µA V_DS = 150V, V_GS = 0V
1.0 mA V_DS = 150V, V_GS = 0V, T_J = 125°C
100 nA V_GS = 20V
-100
V_GS = -20V
––– Ω
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs
Forward Transconductance
130
Q_g
Total Gate Charge
–––
Q_gs
Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain ("Miller") Charge
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
Typ.
–––
71
24
21
18
60
25
35
4460
390
82
Max. Units
Conditions
––– S V_DS = 25V, I_D = 50A
110 nC I_D = 50A
–––
V_DS = 75V
–––
V_GS = 10V f
––– ns V_DD = 75V
–––
I_D = 50A
–––
R_G = 2.5Ω
–––
V_GS = 10V f
––– pF V_GS = 0V
–––
V_DS = 25V
–––
ƒ = 1.0MHz
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) d
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– ^83c A MOSFET symbol
D
showing the
––– ––– 330 A integral reverse
G
S
p-n junction diode.
––– ––– 1.3 V T_J = 25°C, I_S = 50A, V_GS = 0V f
––– 89 130 ns I_D = 50A
––– 300 450 nC V_R = 128V,
––– 6.5 ––– A ^{di/dt = 100A/µs f}
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.096mH
R_G = 25Ω, I_AS = 50A, V_GS =10V. Part not recommended for use
above this value.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… R_θ is measured at T_J approximately 90°C
2
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