IRFS4321PBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

PD - 97105
IRFS4321PbF
IRFSL4321PbF
Applications
l Motion Control Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l Hard Switched and High Frequency Circuits
Benefits
l Low R_DSON Reduces Losses
l Low Gate Charge Improves the Switching
Performance
l Improved Diode Recovery Improves Switching &
EMI Performance
l 30V Gate Voltage Rating Improves Robustness
l Fully Characterized Avalanche SOA
V_DSS
R_DS(on)
I_D
typ.
max.
D
G
S
HEXFET^® Power MOSFET
150V
12m:
15m:
83A c
D
D
S
D
G
S
D
G
D²Pak
TO-262
IRFS4321PbF _IRFSL4321PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
V_GS
E_{AS (Thermally limited)}
T_J
T_STG
Gate-to-Source Voltage
Single Pulse Avalanche Energy e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Parameter
R_θJC
R_θJA
Junction-to-Case g
Junction-to-Ambient g
Max.
83 c
59
330
330
2.2
±30
120
-55 to + 175
300
Typ.
–––
–––
Max.
0.45*
40
Units
A
W
W/°C
V
mJ
°C
Units
°C/W
* R_θJC (end of life) for D²Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes  through … are on page 2
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1
6/23/06