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IRFS4127PBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFS/SL4127PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Min.
200
âââ
âââ
3.0
âââ
âââ
IGSS
Gate-to-Source Forward Leakage
âââ
Gate-to-Source Reverse Leakage
âââ
RG(int)
Internal Gate Resistance
âââ
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs
Forward Transconductance
79
Qg
Total Gate Charge
âââ
Qgs
Gate-to-Source Charge
âââ
Qgd
Gate-to-Drain ("Miller") Charge
âââ
Qsync
Total Gate Charge Sync. (Qg - Qgd)
âââ
td(on)
Turn-On Delay Time
âââ
tr
Rise Time
âââ
td(off)
Turn-Off Delay Time
âââ
tf
Fall Time
âââ
Ciss
Input Capacitance
âââ
Coss
Output Capacitance
âââ
Crss
Reverse Transfer Capacitance
âââ
h Coss eff. (ER) Effective Output Capacitance (Energy Related) âââ
g Coss eff. (TR) Effective Output Capacitance (Time Related)
âââ
Typ.
âââ
0.23
18.6
âââ
âââ
âââ
âââ
âââ
3.0
Typ.
âââ
100
30
31
69
17
18
56
22
5380
410
86
360
590
Max. Units
Conditions
âââ
âââ
22
V VGS = 0V, ID = 250µA
 V/°C Reference to 25°C, ID = 5mA
f m⦠VGS = 10V, ID = 44A
5.0 V VDS = VGS, ID = 250µA
20
250
100
-100
µA
VDS = 200V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
âââ â¦
Max. Units
Conditions
âââ S VDS = 50V, ID = 44A
150
ID = 44A
f âââ nC VDS = 100V
âââ
VGS = 10V
âââ
ID = 44A, VDS =0V, VGS = 10V
âââ
VDD = 130V
âââ
âââ
âââ
ns
ID = 44A
f RG = 2.7â¦
VGS = 10V
âââ
VGS = 0V
âââ
VDS = 50V
âââ pF Æ = 1.0MHz (See Fig.5)
âââ
âââ
h VGS = 0V, VDS = 0V to 160V (See Fig.11)
g VGS = 0V, VDS = 0V to 160V
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 76
MOSFET symbol
D
showing the
A
âââ âââ 300
integral reverse
G
âââ âââ 1.3
f p-n junction diode.
V TJ = 25°C, IS = 44A, VGS = 0V
S
âââ 136 âââ
âââ 139 âââ
ns
TJ = 25°C
TJ = 125°C
âââ
âââ
458
688
âââ
âââ
nC
TJ = 25°C
TJ = 125°C
VR = 100V,
f IF = 44A
di/dt = 100A/µs
âââ 8.3 âââ A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.26mH
RG = 25â¦, IAS = 44A, VGS =10V. Part not recommended for use
above this value .
 ISD ⤠44A, di/dt ⤠760A/µs, VDD ⤠V(BR)DSS, TJ ⤠175°C.
 Pulse width ⤠400µs; duty cycle ⤠2%.
Â
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
 Rθ is measured at TJ approximately 90°C
 RθJC value shown is at time zero
2
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