IRFS4127PBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 96177
IRFS4127PbF
IRFSL4127PbF
HEXFET^® Power MOSFET
D _VDSS
200V
: ^R_DS(on) ^typ. 18.6m
max. 22m:
S ^ID
72A
D
D
S
G
D²Pak
IRFS4127PbF
S
D
G
TO-262
IRFSL4127PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 100°C
I_DM
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
P_D @T_C = 25°C _{Maximum Power Dissipation}
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
e Peak Diode Recovery
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
d E_{AS (Thermally limited)} Single Pulse Avalanche Energy
c I_AR
Avalanche Current
f E_AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
R_θJA
Parameter
jk Junction-to-Case
ij Junction-to-Ambient
www.irf.com
Max.
72
51
300
375
2.5
± 20
57
-55 to + 175
300
x x 10lb in (1.1N m)
250
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
Max.
0.4
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
09/16/08