IRFS4115-7PPBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET

IRFS4115-7PPbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V_(BR)DSS
Drain-to-Source Breakdown Voltage
150
ΔV_(BR)DSS/ΔT_J Breakdown Voltage Temp. Coefficient
–––
R_DS(on)
Static Drain-to-Source On-Resistance
–––
V_GS(th)
Gate Threshold Voltage
3.0
I_DSS
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
R_G(int)
Internal Gate Resistance
–––
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs
Forward Transconductance
93
Q_g
Q_gs
Q_gd
Q_sync
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss eff. (ER)
C_oss eff. (TR)
Total Gate Charge
–––
Gate-to-Source Charge
–––
Gate-to-Drain ("Miller") Charge
–––
Total Gate Charge Sync. (Q_g - Q_gd)
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Effective Output Capacitance (Energy Related)h –––
Effective Output Capacitance (Time Related)g –––
Typ.
–––
0.18
10.
–––
–––
–––
–––
–––
2.1
Typ.
–––
73
28
28
45
18
50
37
23
5320
490
110
450
520
Max. Units
Conditions
–––
–––
11.8
5.0
20
250
100
-100
V V_GS = 0V, I_D = 250μA
V/°C Reference to 25°C, I_D = 3.5mAc
mΩ VGS = 10V, ID = 63A f
V V_DS = V_GS, I_D = 250μA
μA V_DS = 150V, V_GS = 0V
V_DS = 150V, V_GS = 0V, T_J = 125°C
nA V_GS = 20V
V_GS = -20V
––– Ω
Max. Units
Conditions
––– S V_DS = 50V, I_D = 62A
110 nC I_D = 63A
–––
V_DS = 75V
–––
V_GS = 10V f
–––
I_D = 63A, V_DS =0V, V_GS = 10V
––– ns V_DD = 98V
–––
I_D = 63A
–––
R_G = 2.1Ω
–––
V_GS = 10V f
–––
V_GS = 0V
–––
V_DS = 50V
––– pF ƒ = 1.0MHz
–––
V_GS = 0V, V_DS = 0V to 120V h
–––
V_GS = 0V, V_DS = 0V to 120V g
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) c
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 104 A MOSFET symbol
D
showing the
––– ––– 420
integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V T_J = 25°C, I_S = 63A, V_GS = 0V f
––– 82 ––– ns T_J = 25°C
V_R = 130V,
––– 99 –––
T_J = 125°C
I_F = 63A
––– 271 ––– nC T_J = 25°C
di/dt = 100A/μs f
––– 385 –––
T_J = 125°C
––– 6.0 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by T_Jmax, starting T_J = 25°C, L = 0.115mH
R_G = 25Ω, I_AS = 63A, V_GS =10V. Part not recommended for
use above this value.
ƒ I_SD ≤ 63A, di/dt ≤ 2510A/μs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
„ Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
… C_oss eff. (TR) is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
† C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ R_θ is measured at T_J approximately 90°C.
‰ R_θJC value shown is at time zero.
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