IRFS4115-7PPBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

PD -97147
IRFS4115-7PPbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET^® Power MOSFET
D _VDSS
150V
R_DS(on) typ. _10.0m:
max. 11.8m:
S ^ID
105A
D
S
SS
S
S
G
D²Pak 7 Pin
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current c
Maximum Power Dissipation
Linear Derating Factor
V_GS
dv/dt
T_J
T_STG
Gate-to-Source Voltage
Peak Diode Recovery e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)}
I_AR
Single Pulse Avalanche Energy d
Avalanche Current c
E_AR
Repetitive Avalanche Energy f
Thermal Resistance
Symbol
Parameter
R_θJC
Junction-to-Case jk
R_θJA
Junction-to-Ambient (PCB Mount) ij
www.irf.com
G
G ate
D
Drain
S
Source
Max.
105
74
420
380
2.5
± 20
32
-55 to + 175
300
10lbxin (1.1Nxm)
Units
A
W
W/°C
V
V/ns
°C
230
mJ
See Fig. 14, 15, 22a, 22b,
A
mJ
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
1
11/7/08