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IRFS3107-7PPBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFS3107-7PPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
75 âââ âââ
âââ 0.083 âââ
âââ 2.1 2.6
2.0 âââ 4.0
âââ âââ 20
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 5mAc
m⦠VGS = 10V, ID = 160A f
V VDS = VGS, ID = 250µA
µA VDS = 75V, VGS = 0V
IGSS
Gate-to-Source Forward Leakage
âââ âââ 250
âââ âââ 100
VDS = 75V, VGS = 0V, TJ = 125°C
nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
RG(int)
Internal Gate Resistance
âââ 2.1 âââ â¦
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
260 âââ âââ
âââ 160 240
âââ 38 âââ
âââ 57 âââ
âââ 103 âââ
âââ 17 âââ
âââ 80 âââ
âââ 100 âââ
âââ 64 âââ
âââ 9200 âââ
âââ 850 âââ
âââ 400 âââ
S VDS = 25V, ID = 160A
nC ID = 160A
VDS = 38V
VGS = 10V f
ID = 160A, VDS =0V, VGS = 10V
ns VDD = 49V
ID = 160A
RG = 2.7â¦
VGS = 10V f
VGS = 0V
VDS = 50V
pF Æ = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related)h âââ 1150 âââ
Coss eff. (TR) Effective Output Capacitance (Time Related)g âââ 1500 âââ
VGS = 0V, VDS = 0V to 60V h
VGS = 0V, VDS = 0V to 60V g
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) c
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 260 A MOSFET symbol
D
showing the
âââ âââ 1060
integral reverse
G
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 160A, VGS = 0V f
âââ 52 âââ ns TJ = 25°C
VR = 64V,
âââ 63 âââ
TJ = 125°C
âââ 110 âââ nC TJ = 25°C
IF = 160A
di/dt = 100A/µs f
âââ 160 âââ
TJ = 125°C
âââ 3.8 âââ A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.026mH
RG = 25â¦, IAS = 160A, VGS =10V. Part not recommended for use
above this value .
 ISD ⤠160A, di/dt ⤠1420A/µs, VDD ⤠V(BR)DSS, TJ ⤠175°C.
 Pulse width ⤠400µs; duty cycle ⤠2%.
Â
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
 Rθ is measured at TJ approximately 90°C.
 RθJC value shown is at time zero.
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