IRFS3107-7PPBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

PD -97344
IRFS3107-7PPbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
G
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET^® Power MOSFET
D
V_DSS
75V
R_DS(on) typ.
2.1mΩ
max. 2.6mΩ
I_D
260A
S
I_{D (Package Limited)}
240A
D
S
SS
S
S
G
D²Pak 7 Pin
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 25°C
I_DM
Continuous Drain Current, V_GS @ 10V (Package Limited)
Pulsed Drain Current c
P_D @T_C = 25°C _{Maximum Power Dissipation}
Linear Derating Factor
V_GS
Gate-to-Source Voltage
dv/dt
Peak Diode Recovery e
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)} ^{Single Pulse Avalanche Energy d}
I_AR
Avalanche Current c
E_AR
Repetitive Avalanche Energy f
Thermal Resistance
Symbol
Parameter
R_θJC
Junction-to-Case jk
R_θJA
Junction-to-Ambient (PCB Mount) ij
www.irf.com
Max.
260
190
240
1060
370
2.5
± 20
13
-55 to + 175
300
10lbxin (1.1Nxm)
320
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
Max.
0.40
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
10/07/08