IRFR8314PBF_15 Datasheet, PDF(2/9 Page) International Rectifier – Optimized for UPS/Inverter Applications

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IRFR8314PBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – Optimized for UPS/Inverter Applications

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IRFR8314PbF

Static @ TJ = 25Â°C (unless otherwise specified)

Symbol

Parameter

BVDSS

Drain-to-Source Breakdown Voltage

ïBVDSS/ïTJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

ïVGS(th)/ïTJ

IDSS

IGSS

gfs

Qgs1

Qgs2

Qgd

Qgodr

Qsw

td(on)

td(off)

Ciss

Coss

Crss

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Qgs2 + Qgd)

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min.

âââ

1.2

âââ

189

âââ

Typ.

âââ

1.6

2.6

1.7

-7.0

âââ

7.7

8.3

2.0

4945

908

493

Max. Units

Conditions

âââ V VGS = 0V, ID = 250ÂµA

âââ mV/Â°C Reference to 25Â°C, ID = 1mA ï

2.2 mïï VGS = 10V, ID = 90A ï

3.1

ï VGS = 4.5V, ID = 72A ï

2.2 V VDS = VGS, ID = 100ÂµA

âââ mV/Â°C

1.0

150

100

-100

âââ

ÂµA

VDS =24 V, VGS = 0V

VDS =24V,VGS = 0V,TJ =125Â°C

VGS = 20V

VGS = -20V

S VDS = 15V, ID =72A

âââ

VDS = 15V

âââ nC VGS = 4.5V

âââ

ID = 72A

âââ

âââ ïï

âââ

VDD = 15V

âââ ns ID = 72A

âââ

RG= 1.8ïï

âââ

VGS = 4.5V ï

âââ

VGS = 0V

âââ pF VDS = 15V

âââ

Æ = 1.0MHz

Avalanche Characteristics

EAS (Thermally limited) Single Pulse Avalanche Energy ï

EAS (tested)

Single Pulse Avalanche Energy Tested Value ï

Avalanche Current

180

279

Diode Characteristics

Symbol

ISM

VSD

trr

Qrr

Parameter

Continuous Source Current

(Body Diode) ï

Pulsed Source Current

(Body Diode)ï ïï

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Min.

âââ

Typ. Max. Units

Conditions

âââ 179ï

âââ 357

MOSFET symbol

showing the

integral reverse

p-n junction diode.

âââ 1.0 V TJ = 25Â°C,IS = 72A,VGS = 0V ï

31 47 ns TJ = 25Â°C IF = 72A ,VDD=15V

87 130 nC di/dt = 360A/Âµs ïï

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July 01, 2014

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