IRFR825PBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – ZERO VOLTAGE SWITCHING SMPS

IRFR825TRPbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage 500 ––– –––
ΔV_(BR)DSS/ΔT_J Breakdown Voltage Temp. Coefficient ––– 0.33 –––
R_DS(on)
Static Drain-to-Source On-Resistance ––– 1.05 1.3
V_GS(th)
Gate Threshold Voltage
3.0 ––– 5.0
I_DSS
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 2.0
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100
Gate-to-Source Reverse Leakage
––– ––– -100
Dynamic @ T_J = 25°C (unless otherwise specified)
V VGS = 0V, ID = 250μA
f V/°C Reference to 25°C, ID = 1mA
Ω VGS = 10V, ID = 3.7A
V VDS = VGS, ID = 250μA
μA VDS = 500V, VGS = 0V
mA VDS = 400V, VGS = 0V, TJ = 125°C
nA ^{VGS = 20V}
V_GS = -20V
Parameter
Min. Typ. Max. Units
Conditions
gfs
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
C_oss eff. (ER)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
7.5 ––– –––
––– ––– 34
––– ––– 11
––– ––– 14
––– 8.5 –––
––– 25 –––
––– 30 –––
––– 20 –––
––– 1346 –––
––– 76 –––
––– 15 –––
––– 1231 –––
––– 25 –––
––– 51 –––
––– 43 –––
S VDS = 50V, ID = 3.7A
I_D = 6.0A
f nC VDS = 400V
V_GS = 10V, See Fig.14a &14b
V_DD = 250V
ns ID = 6.0A
f ^{RG =7.5Ω}
V_GS = 10V, See Fig. 15a & 15b
V_GS = 0V
V_DS = 25V
ƒ = 1.0KHz, See Fig. 5
pF VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 400V, ƒ = 1.0MHz
g V_GS = 0V,V_DS = 0V to 400V
Avalanche Characteristics
Parameter
E_AS
I_AR
d Single Pulse Avalanche Energy
Ù Avalanche Current
E_AR
™ Repetitive Avalanche Energy
Thermal Resistance
Typ.
–––
–––
–––
Max.
178
3
11.9
Units
mJ
A
mJ
Parameter
R_θJC
R_θJA
h Junction-to-Case
i Junction-to-Ambient (PCB Mount)
R_θJA
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.05
50
110
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max.
junction temperature. (See Fig. 11)
‚ Starting T_J = 25°C, L = 40mH, R_G = 25Ω,I_AS = 3.0A.
(See Figure 13).
ƒ I_SD = 6.0A, di/dt ≤ 416A/μs, V_DDV_(BR)DSS,T_J ≤ 150°C.
„ Pulse width ≤ 300μs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time as
C_oss while V_DS is rising from 0 to 80% V_DSS. C_oss eff.(ER) is a fixed
capacitance that stores the same energy as C_oss while V_DS is rising
from 0 to 80% V_DSS.
† R_θ is measured at T_J approximately 90°C
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN- 994 echniques refer to application note #AN-994.
2
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