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| IRFR825PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – ZERO VOLTAGE SWITCHING SMPS | |||
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PD - 96433A
IRFR825TRPbF
HEXFET® Power MOSFET
Applications
⢠Zero Voltage Switching SMPS
⢠Uninterruptible Power Supplies
⢠Motor Control applications
VDSS RDS(on) typ. Trr typ. ID
500V 1.05Ω
92ns 6.0A
D
Features and Benefits
⢠Fast body diode eliminates the need for external
diodes in ZVS applications.
⢠Lower Gate charge results in simpler drive requirements.
⢠Higher Gate voltage threshold offers improved noise
immunity.
S
G
D-Pak
IRFR825TRPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
 Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
6.0
3.9
24
119
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
1.0
± 20
9.9
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
300 (1.6mm from case )
Min. Typ. Max. Units Conditions
âââ âââ 6.0
MOSFET symbol
D
A showing the
âââ âââ 24
âââ âââ 1.2
integral reverse
G
f p-n junction diode.
S
V TJ = 25°C, IS = 6.0A, VGS = 0V
âââ 92 138
âââ 152 228
âââ 167 251
âââ 292 438
f ns TJ = 25°C, IF = 6.0A
TJ = 125°C, di/dt = 100A/μs
f nC TJ = 25°C, IS = 6.0A, VGS = 0V
f TJ = 125°C, di/dt = 100A/μs
âââ 3.6 5.4
f TJ = 25°C, IS = 6.0A, VGS = 0V
A di/dt = 100A/μs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes  through  are on page 2
www.irf.com
1
12/19/12
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