IRFR812PBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFETPower MOSFET

IRFR812TRPbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on)
V_GS(th)
I_DSS
Drain-to-Source Breakdown Voltage 500
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
3.0
Drain-to-Source Leakage Current
–––
–––
0.37
1.85
–––
–––
––– V V_GS = 0V, I_D = 250μA
f ^{––– V/°C Reference to 25°C, ID = 250μA}
2.2 _Ω V_GS = 10V, I_D = 2.2A
5.0 V V_DS = V_GS, I_D = 250μA
25 μA V_DS = 500V, V_GS = 0V
––– ––– 2.0 mA V_DS = 400V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
C_oss eff. (ER)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
7.6 ––– ––– S V_DS = 50V, I_D = 2.2A
––– ––– 20
I_D = 3.6A
–––
–––
–––
–––
7.3
7.1
f nC VDS = 400V
V_GS = 10V, See Fig.14a &14b
––– 14 –––
V_DD = 250V
––– 22 ––– ns I_D = 3.6A
––– 24 –––
––– 17 –––
f ^{RG = 17Ω}
V_GS = 10V, See Fig. 15a & 15b
––– 810 –––
V_GS = 0V
––– 47 –––
V_DS = 25V
––– 7.3 –––
ƒ = 1.0MHz, See Fig. 5
––– 610 ––– pF VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
––– 16 –––
––– 5.9 –––
V_GS = 0V, V_DS = 400V, ƒ = 1.0MHz
g V_GS = 0V,V_DS = 0V to 400V
––– 37 –––
(Energy Related)
Avalanche Characteristics
Symbol
E_AS
I_AR
E_AR
d ^Parameter
Single Pulse Avalanche Energy
Ù Avalanche Current
™ Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
150
1.8
7.8
Units
mJ
A
mJ
Thermal Resistance
Symbol
R_θJC
R_θJA
R_θJA
h ^Parameter
Junction-to-Case
hi Junction-to-Ambient (PCB mount)
h Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.6
40
110
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ Starting T_J = 25°C, L = 93mH, R_G = 25Ω,
I_AS = 1.8A. (See Figure 13).
ƒ I_SD = 3.6A, di/dt ≤ 520A/μs, V_DDV_(BR)DSS,
T_J ≤ 150°C.
2
„ Pulse width ≤ 300μs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
C_oss eff.(ER) is a fixed capacitance that stores the same energy
as C_oss while V_DS is rising from 0 to 80% V_DSS.
† R_θ is measured at T_J approximately 90°C
‡ When mounted on 1" square PCB (FR-4 or G-10 Material)
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