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| IRFR812PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFETPower MOSFET | |||
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PD -97773
IRFR812TRPbF
Applications
⢠Zero Voltage Switching SMPS
⢠Uninterruptible Power Supplies
⢠Motor Control applications
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
500V 1.85Ω
75ns 3.6A
Features and Benefits
⢠Fast body diode eliminates the need for external
diodes in ZVS applications.
⢠Lower Gate charge results in simpler drive requirements.
⢠Higher Gate voltage threshold offers improved noise
immunity.
D
S
G
D-Pak
IRFR812TRPbF
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
3.6
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
2.3
A
IDM
 Pulsed Drain Current
14.4
PD @TC = 25°C Power Dissipation
78
W
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
e Peak Diode Recovery dv/dt
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
0.63
± 20
32
-55 to + 150
300 (1.6mm from case )
x x 10lb in (1.1N m)
W/°C
V
V/ns
°C
Symbol
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current
âââ âââ 3.6
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
âââ âââ 14.4
âââ âââ 1.2
âââ 75 110
âââ 94 140
âââ 135 200
âââ 220 330
âââ 3.2 4.8
A showing the
integral reverse
G
p-n junction diode.
S
f V TJ = 25°C, IS = 3.6A, VGS = 0V
ns TJ = 25°C, IF = 3.6A
f TJ = 125°C, di/dt = 100A/μs
f nC TJ = 25°C, IS = 3.6A, VGS = 0V
f TJ = 125°C, di/dt = 100A/μs
f A TJ = 25°C, IS = 3.6A, VGS = 0V
ton
Forward Turn-On Time
di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes  through  are on page 2
www.irf.com
1
4/10/12
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