English
Language : 

IRFR540ZTRLPBF Datasheet, PDF (2/11 Pages) International Rectifier – Advanced Process Technology
◁
IRFR/U540ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
100 ––– ––– V VGS = 0V, ID = 250µA
e ––– 0.092 ––– V/°C Reference to 25°C, ID = 1mA
––– 22.5 28.5 mΩ VGS = 10V, ID = 21A
2.0 ––– 4.0 V VDS = VGS, ID = 50µA
28 ––– ––– S VDS = 25V, ID = 21A
––– ––– 20 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 100V, VGS = 0V, TJ = 125°C
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
––– 39 59
ID = 21A
–––
–––
11
12
–––
–––
e nC VDS = 50V
VGS = 10V
––– 14 –––
VDD = 50V
––– 42 –––
ID = 21A
–––
–––
43
34
–––
–––
e ns RG = 13 Ω
VGS = 10V
––– 4.5 –––
Between lead,
D
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
and center of die contact
S
––– 1690 –––
VGS = 0V
––– 180 –––
VDS = 25V
––– 100 ––– pF ƒ = 1.0MHz
––– 720 –––
––– 110 –––
––– 190 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
f VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 35
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
Ù (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
––– ––– 140
A showing the
integral reverse
––– ––– 1.3
e p-n junction diode.
V TJ = 25°C, IS = 21A, VGS = 0V
––– 32
––– 40
48
60
e ns TJ = 25°C, IF = 21A, VDD = 50V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
 ▷