IRFR540ZTRLPBF Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology

Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
l Halogen-Free
G
Description
This HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ ^{ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
d E_{AS (Thermally limited)} Single Pulse Avalanche Energy
h _{EAS (Tested )} Single Pulse Avalanche Energy Tested Value
Ù I_AR
Avalanche Current
g E_AR
Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
R_θJA
R_θJA
j Junction-to-Case
ij Junction-to-Ambient (PCB mount)
j Junction-to-Ambient
HEXFET^® is a registered trademark of International Rectifier.
www.irf.com
PD - 96141B
IRFR540ZPbF
IRFU540ZPbF
HEXFET^® Power MOSFET
D
V_DSS = 100V
R_DS(on) = 28.5mΩ
I_D = 35A
S
D-Pak
I-Pak
IRFR540ZPbF IRFU540ZPbF
Max.
35
25
140
91
0.61
± 20
39
75
See Fig.12a, 12b, 15, 16
-55 to + 175
300
y y 10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
–––
Max.
1.64
40
110
Units
°C/W
1
09/30/10