IRFR4510PBF_15 Datasheet, PDF (2/11 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

IRFR/U4510PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
V_(BR)DSS/T_J
R_DS(on)
V_GS(th)
I_DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G(int)
Internal Gate Resistance
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Q_g
Q_gs
Q_gd
Q_sync
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss eff. (ER)
C_oss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q_g - Q_gd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min.
100
–––
–––
2.0
–––
–––
–––
–––
–––
Min.
62
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.10
11.1
3.0
–––
–––
–––
–––
0.61
Typ.
–––
54
14
15
39
18
42
42
34
3031
213
104
255
478
Max.
–––
–––
13.9
4.0
20
250
100
-100
–––
Units
Conditions
V
V/°C
m
V
μA
nA

V_GS = 0V, I_D = 250μA
™ Reference to 25°C, I_D = 5mA
f V_GS = 10V, I_D = 38A
V_DS = V_GS, I_D = 100μA
V_DS = 100V, V_GS = 0V
V_DS = 100V, V_GS = 0V, T_J = 125°C
V_GS = 20V
V_GS = -20V
Max.
–––
81
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
S V_DS = 25V, I_D = 38A
I_D = 38A
f nC VDS = 50V
V_GS = 10V
I_D = 38A, V_DS =0V, V_GS = 10V
V_DD = 65V
ns ^{ID = 38A}
f ^{RG = 7.5}
V_GS = 10V
V_GS = 0V
V_DS = 50V
pF
ƒ = 1.0MHz
h V_GS = 0V, V_DS = 0V to 80V
g V_GS = 0V, V_DS = 0V to 80V
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I_S
I_SM
V_SD
dv/dt
t_rr
Q_rr
I_RRM
t_on
Continuous Source Current
(Body Diode)
Ù ^{Pulsed Source Current}
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
MOSFET symbol
D
––– ––– 56
A ^{showing the}
integral reverse
G
––– ––– 252
–––
–––
–––
7.0
1.3
–––
p-n junction diode.
S
f V T_J = 25°C, I_S = 38A, V_GS = 0V
e V/ns T_J = 175°C, I_S = 38A, V_DS = 100V
–––
34
–––
ns ^{TJ = 25°C}
––– 39 –––
T_J = 125°C
–––
47
–––
nC ^{TJ = 25°C}
––– 61 –––
T_J = 125°C
V_R = 86V
f ^{IF = 38A}
di/dt = 100A/μs
––– 2.4 –––
A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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