IRFR4510PBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
G
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 97784
IRFR4510PbF
IRFU4510PbF
HEXFET^® Power MOSFET
D
V_DSS
100V
R_DS(on) typ.
11.1m
max.
13.9m
I_{D (Silicon Limited)}
63A
S
I_{D (Package Limited)}
56A
D
D
S
G
DPak
IRFR4510PbF
S
D
G
IPAK
IRFU4510PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
c ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
E_{AS (Thermally limited)}
I_AR
E_AR
d Single Pulse Avalanche Energy
c Avalanche Current
c Repetitive Avalanche Energy
Thermal Resistance
R_JC
R_JA
Symbol
Parameter
j Junction-to-Case
i Junction-to-Ambient (PCB Mount)
R_JA
Junction-to-Ambient
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through ˆ are on page 11
www.irf.com
Max.
63
45
56
252
143
0.95
± 20
-55 to + 175
300
127
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
–––
Max.
1.05
50
110
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
1
05/02/12