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IRFR3505PBF Datasheet, PDF (2/12 Pages) International Rectifier – HEXFET® Power MOSFET | |||
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IRFR/U3505PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance Â
Min. Typ. Max. Units
55 âââ âââ V
âââ 0.057 âââ V/°C
âââ 0.011 0.013 â¦
2.0 âââ 4.0 V
41 âââ âââ S
âââ âââ 20 µA
âââ âââ 250
âââ âââ 200
nA
âââ âââ -200
âââ 62 93
âââ 17 26 nC
âââ 22 33
âââ 13 âââ
âââ 74 âââ
ns
âââ 43 âââ
âââ 54 âââ
âââ 4.5 âââ
nH
âââ 7.5 âââ
âââ 2030 âââ
âââ 470 âââ pF
âââ 91 âââ
âââ 2600 âââ
âââ 330 âââ
âââ 630 âââ
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 30A Â
VDS = 10V, ID = 250µA
VDS = 25V, ID = 30A
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
ID = 30A
VDS = 44V
VGS = 10VÂ
VDD = 28V
ID = 30A
RG = 6.8â¦
VGS = 10V Â
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
Æ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 44V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 71
A showing the
integral reverse
G
âââ âââ 280
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 30A, VGS = 0V Â
âââ 70 105 ns TJ = 25°C, IF = 30A, VDD = 28V
âââ 180 270 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes  through  are on page 11
2
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