IRFR3505PBF Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET® Power MOSFET

PD - 95511A
AUTOMOTIVE MOSFET
IRFR3505PbF
IRFU3505PbF
HEXFET^® Power MOSFET
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
l Lead-Free
D
V_DSS = 55V
R_DS(on) = 0.013Ω
I_D = 30A
S
Description
Specifically designed for Automotive applications, this HEXFET^® Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this product are
a 175°C junction operating temperature, fast switching speed and im-
proved repetitive avalanche rating. These features combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The D-Pak is designed for surface mounting using vapor phase, infrared,
or wave soldering techniques. The straight lead version (IRFU series) is
for through-hole mounting applications. Power dissipation levels up to
1.5 watts are possible in typical surface mount applications.
Absolute Maximum Ratings
D-Pak
IRFR3505
I-Pak
IRFU3505
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
E_AS (tested)
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon limited)
Continuous Drain Current, V_GS @ 10V (See Fig.9)
Continuous Drain Current, V_GS @ 10V (Package limited)
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Value‡
Avalanche Current
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
71
49
30
280
140
0.92
± 20
210
410
See Fig.12a, 12b, 15, 16
4.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
R_θJC
R_θJA
R_θJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)ˆ
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.09
40
110
Units
°C/W
1
12/03/04