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| IRFR3504PBF Datasheet, PDF (2/11 Pages) International Rectifier – AUTOMOTIVE MOSFET | |||
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IRFR/U3504PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
40 âââ âââ
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ 0.041 âââ
RDS(on)
Static Drain-to-Source On-Resistance âââ 7.8 9.2
VGS(th)
Gate Threshold Voltage
2.0 âââ 4.0
V
V/°C
mâ¦
V
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 30A Â
VDS = 10V, ID = 250µA
gfs
Forward Transconductance
40 âââ âââ S VDS = 10V, ID = 30A
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 40V, VGS = 0V
âââ âââ 250
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -200
VGS = -20V
Qg
Total Gate Charge
âââ 48 71
ID = 30A
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
âââ 12 18
âââ 13 20
nC VDS = 32V
VGS = 10VÂ
âââ 11 âââ
VDD = 20V
âââ 53 âââ
ID = 30A
âââ 36 âââ ns RG = 6.8â¦
âââ 22 âââ
VGS = 10V Â
âââ 4.5 âââ
Between lead,
D
nH 6mm (0.25in.)
âââ 7.5 âââ
from package
G
and center of die contact
S
Ciss
Input Capacitance
âââ 2150 âââ
VGS = 0V
Coss
Output Capacitance
âââ 580 âââ
VDS = 25V
Crss
Reverse Transfer Capacitance
âââ 46 âââ pF Æ = 1.0MHz, See Fig. 5
Coss
Coss
Coss eff.
Output Capacitance
Output Capacitance
Effective Output Capacitance Â
âââ 2830 âââ
âââ 510 âââ
âââ 870 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 32V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 87
A showing the
integral reverse
G
âââ âââ 350
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 30A, VGS = 0V Â
âââ 53 80 ns TJ = 25°C, IF = 30A, VDD = 20V
âââ 86 130 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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