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IRFR13N20D Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A) | |||
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IRFR13N20D/IRFU13N20D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
200
âââ
âââ
3.0
âââ âââ
0.25 âââ
âââ 0.235
âââ 5.5
V
V/°C
â¦
V
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 8.0A Â
VDS = VGS, ID = 250µA
âââ âââ 25
âââ âââ 250
µA VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
6.2 âââ âââ
Qg
Total Gate Charge
âââ 25 38
Qgs
Gate-to-Source Charge
âââ 7.3 11
Qgd
Gate-to-Drain ("Miller") Charge
âââ 12 18
td(on)
Turn-On Delay Time
âââ 11 âââ
tr
Rise Time
âââ 27 âââ
td(off)
Turn-Off Delay Time
âââ 17 âââ
tf
Fall Time
âââ 10 âââ
Ciss
Input Capacitance
âââ 830 âââ
Coss
Output Capacitance
âââ 140 âââ
Crss
Reverse Transfer Capacitance
âââ 35 âââ
Coss
Output Capacitance
âââ 990 âââ
Coss
Output Capacitance
âââ 57 âââ
Coss eff. Effective Output Capacitance
âââ 59 âââ
Avalanche Characteristics
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 7.8A
ID = 7.8A
VDS = 160V
VGS = 10V, Â
VDD = 100V
ID = 7.8A
RG = 6.8â¦
VGS = 10V Â
VGS = 0V
VDS = 25V
Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 160V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 160V Â
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
130
7.8
11
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
âââ
1.4
âââ
50
°C/W
âââ
110
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
MOSFET symbol
D
âââ âââ 13
A showing the
integral reverse
G
âââ âââ 52
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
âââ âââ 1.3 V TJ = 25°C, IS = 7.8A, VGS = 0V Â
âââ 140 210 ns TJ = 25°C, IF = 7.8A
âââ 750 1120 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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