IRFR13N20D Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)

SMPS MOSFET
PD- 93814A
IRFR13N20D
IRFU13N20D
HEXFET^® Power MOSFET
Applications
l High frequency DC-DC converters
V_DSS R_DS(on) max
I_D
200V
0.235Ω
13A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C_OSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
I-Pak
IRFR13N20D IRFU13N20D
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
13
9.2
52
110
0.71
± 30
2.2
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l Telecom 48V input Forward Converters
Notes  through † are on page 10
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