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IRFPS30N60K Datasheet, PDF (2/8 Pages) International Rectifier – SMPS MOSFET | |||
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IRFPS30N60K
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
600 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.66 âââ V/°C Reference to 25°C, ID = 1mAÂ
âââ 160 190 m⦠VGS = 10V, ID = 18A Â
3.0 âââ 5.0 V VDS = VGS, ID = 250µA
âââ âââ 50 µA VDS = 600V, VGS = 0V
âââ âââ 250
VDS = 480V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
16 âââ âââ
âââ âââ 220
âââ âââ 64
âââ âââ 110
âââ 29 âââ
âââ 120 âââ
âââ 56 âââ
âââ 50 âââ
âââ 5870 âââ
âââ 530 âââ
âââ 54 âââ
âââ 6920 âââ
âââ 140 âââ
âââ 270 âââ
S VDS = 50V, ID = 18A
ID = 30A
nC VDS = 480V
VGS = 10V Â
VDD = 300V
ns ID = 30A
RG = 3.9 â¦
VGS = 10V Â
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 480V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 480V Â
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
trr
Qrr
IRRM
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Starting TJ = 25°C, L = 1.1mH, RG = 25â¦,
IAS = 30A
 ISD ⤠30A, di/dt ⤠630A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 30
A showing the
integral reverse
G
âââ âââ 120
p-n junction diode.
S
âââ âââ 1.5 V TJ = 25°C, IS = 30A, VGS = 0V Â
âââ 640 960 ns TJ = 25°C, IF = 30A
âââ 11 16 µC di/dt = 100A/µs Â
âââ 31 âââ A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
 Pulse width ⤠300µs; duty cycle ⤠2%.
Â
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
 Rθ is measured at TJ approximately 90°C
2
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