IRFPS30N60K Datasheet, PDF (1/8 Pages) International Rectifier – SMPS MOSFET

PD- 94417A
IRFPS30N60K
SMPS MOSFET _{HEXFET® Power MOSFET}
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
V_DSS R_DS(on) typ.
I_D
600V
160mΩ
30A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
Super-247™
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Max.
30
19
120
450
3.6
± 30
13
-55 to + 150
300
Units
A
W
W/°C
V
V/ns
°C
Avalanche Characteristics
Symbol
E_AS
I_AR
E_AR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
520
30
45
Units
mJ
A
mJ
Thermal Resistance
Symbol
R_θJC
R_θCS
R_θJA
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Parameter
Junction-to-Case†
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient†
Typ.
–––
0.24
–––
Max.
0.28
–––
40
Units
°C/W
1
8/26/04