IRFP4127PBF_15 Datasheet, PDF(2/9 Page) International Rectifier – High Efficiency Synchronous Rectification in SMPS

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IRFP4127PBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

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IRFP4127PbF

Static @ TJ = 25Â°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

ïV(BR)DSS/ïTJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

200 âââ âââ V VGS = 0V, ID = 250ÂµA

âââ 0.23 âââ V/Â°C Reference to 25Â°C, ID = 5mA

âââ 17 21 mïï VGS = 10V, ID = 44A ïï

VGS(th)

Gate Threshold Voltage

3.0 âââ 5.0

IDSS

Drain-to-Source Leakage Current

âââ âââ 20

âââ âââ 250

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

âââ âââ 100

âââ âââ -100

Gate Resistance

âââ 3.0 âââ

Dynamic Electrical Characteristics @ TJ = 25Â°C (unless otherwise specified)

gfs

Forward Transconductance

45 âââ âââ

Qgs

Qgd

Qsync

td(on)

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain Charge

Total Gate Charge Sync. (Qg - Qgd)

Turn-On Delay Time

Rise Time

âââ 100 150

âââ 30 âââ

âââ 31 âââ

âââ 69 âââ

âââ 17 âââ

âââ 18 âââ

td(off)

Turn-Off Delay Time

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

âââ 56 âââ

âââ 22 âââ

âââ 5380 âââ

âââ 410 âââ

âââ 86 âââ

Coss eff.(ER) Effective Output Capacitance (Energy Related) âââ 360 âââ

Coss eff.(TR) Output Capacitance (Time Related)

âââ 590 âââ

V VDS = VGS, ID = 250ÂµA

ÂµA

VDS = 200 V, VGS = 0V

VDS =200V,VGS = 0V,TJ =125Â°C

VGS = 20V

VGS = -20V

ïï

S VDS = 50V, ID =44A

ID = 44A

VDS = 100V

VGS = 10V

ID = 44A, VDS =0V, VGS = 10V

VDD = 100V

ID = 44A

RG= 2.7ïï

VGS = 10V

VGS = 0V

VDS = 50V

pF Æ = 1.0MHz

VGS = 0V, VDS = 0V to 160Vï

See Fig.11

VGS = 0V, VDS = 0V to 160Vï

Diode Characteristics

Parameter

Continuous Source Current

(Body Diode) ï

ISM

Pulsed Source Current

(Body Diode)ï ïï

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IRRM

Reverse Recovery Current

Min.

âââ

Typ.

âââ

136

139

458

688

8.3

Max. Units

Conditions

300

MOSFET symbol

showing the

integral reverse

p-n junction diode.

1.3 V TJ = 25Â°C,IS = 44A,VGS = 0V ïï

âââ

TJ = 25Â°C

TJ = 125Â°C

VDD = 100V

IF = 44A,

âââ

TJ = 25Â°C

TJ = 125Â°C

di/dt = 100A/Âµs ïï ï

âââ A TJ = 25Â°C ï

Notes:ï

ï Repetitive rating; pulse width limited by max. junction temperature.

ï Recommended max EAS limit, starting TJ = 25Â°C, L = 0.25mH, RG = 25ï, IAS = 44A, VGS =10V.

ï ISD ï£ï ï´4A, di/dt ï£ï ï·ï¶ï°A/Âµs, VDD ï£ï V(BR)DSS, TJ ï£ 175Â°C.

ï Pulse width ï£ï 400Âµs; duty cycle ï£ 2%.

ï Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

ï Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.

ï When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques

refer to application note #AN-994

ï Rï±ï is measured at TJ approximately 90Â°C

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March 09, 2015

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