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IRFP4127PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS
Application
 High Efficiency Synchronous Rectification in SMPS
 Uninterruptible Power Supply
High Speed Power Switching
 Hard Switched and High Frequency Circuits
D
G
S
IRFP4127PbF
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max
ID
200V
17m
21m
75A
Benefits
 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
 Fully Characterized Capacitance and Avalanche SOA
 Enhanced body diode dV/dt and dI/dt Capability
 Lead-Free, RoHS Compliant
S
D
G
TO-247AC
G
Gate
D
Drain
S
Source
Base part number Package Type
IRFP4127PbF
TO-247AC
Standard Pack
Form
Quantity
Tube
25
Orderable Part Number
IRFP4127PbF
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy 
Thermal Resistance
Parameter
RJC
Junction-to-Case 
RCS
Case-to-Sink, Flat Greased Surface
RJA
Junction-to-Ambient 
Max.
75
53
300
341
2.3
± 20
57
-55 to + 175
300
10 lbf·in (1.1 N·m)
244
Typ.
–––
0.24
–––
Max.
0.4
–––
40
Units
A
W
W/°C
V
V/ns
°C
mJ
Units
°C/W
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March 09, 2015