IRFBC20S Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)

IRFBC20S/L
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Qg
Q_gs
Q_gd
td(on)
tr
td(off)
t_f
L_S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
600 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.88 ––– V/°C Reference to 25°C, I_D =1mA…
––– ––– 4.4 Ω VGS =10V, ID = 1.3A „
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
1.4 ––– ––– S VDS = 50V, ID = 1.3A…
––– ––– 100 _µA V_DS = 600V, V_GS = 0V
––– ––– 500
V_DS = 480V, V_GS = 0V, T_J = 125°C
––– ––– 100 _nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 18
ID = 2.0A
––– ––– 3.0
––– ––– 8.9
nC V_DS = 360V
V_GS = 10V, See Fig. 6 and 13 „…
––– 10 –––
VDD = 300V
––– 23 ––– _ns ID = 2.0A
––– 30 –––
RG = 18Ω
––– 25 –––
R_D = 150Ω, See Fig. 10 „…
Between lead,
––– 7.5 ––– nH _{and center of die contact}
––– 350 –––
VGS = 0V
––– 48 ––– pF VDS = 25V
––– 8.6 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V _SD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 2.2 _{A showing the}
integral reverse
G
––– ––– 8.0
p-n junction diode.
S
––– ––– 1.6 V T_J = 25°C, I_S = 2.2A, V_GS = 0V „
––– 290 580 ns TJ = 25°C, IF = 2.0A
––– 0.67 1.3 µC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ V_DD =50V, starting T_J = 25°C, L =31mH
R_G = 25Ω, I_AS = 2.2A. (See Figure 12)
ƒ I_SD ≤ 2.2A, di/dt ≤ 40A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Uses IRFBC20 data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.