IRFBC20S Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)

PRELIMINARY
l Surface Mount (IRFBC20S)
l Low-profile through-hole (IRFBC20L)
l Available in Tape & Reel (IRFBC20S)
l Dynamic dv/dt Rating
l 150°C Operating Temperature
G
l Fast Switching
l Fully Avalanche Rated
PD - 9.1014
IRFBC20S/L
HEXFET^® Power MOSFET
D
V_DSS = 600V
R_DS(on) = 4.4Ω
I_D = 2.2A
S
Description
Third generation HEXFETs from international Rectifier provide the designer with the
best combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The D²Pak is a surface mount power package capable ofthe accommodatingdie sizes
up to HEX-4. It provides the highest power capability and the lowest possible on-
resistance in any existing surface mount package. The D²Pak is suitable for high
current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application. The through-hole version
(IRFBC20L) is available for low-profile applications.
D ² Pak
T O -262
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V…
Continuous Drain Current, V_GS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
R_θJA
Junction-to-Ambient ( PCB Mounted,steady-state)**
Max.
2.2
1.4
8.0
3.1
50
0.40
± 20
84
2.2
5.0
3.0
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
Max.
2.5
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
7/22/97