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| IRFBA31N50L Datasheet, PDF (2/3 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFBA31N50L
PROVISIONAL
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
500 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.55 âââ V/°C Reference to 25°C, ID = 1mAÂ
âââ âââ 0.152 ⦠VGS = 10V, ID = 19A Â
3.5 âââ 5.5 V VDS = VGS, ID = 250µA
âââ âââ 50 µA VDS = 500V, VGS = 0V
âââ âââ 2.0 mA VDS = 400V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
12 âââ âââ S VDS = 50V, ID = 19A
Qg
Total Gate Charge
âââ âââ 195
ID = 31A
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
âââ âââ 75
âââ âââ 90
nC VDS = 400V
VGS = 10V, Â
td(on)
Turn-On Delay Time
âââ 20 âââ
VDD = 250V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
âââ 60 âââ ns ID = 31A
âââ 45 âââ
RG = 4.3â¦
âââ 40 âââ
VGS = 10V, Â
Ciss
Input Capacitance
âââ 5300 âââ
VGS = 0V
Coss
Output Capacitance
âââ 540 âââ
VDS = 25V
Crss
Reverse Transfer Capacitance
âââ 33 âââ pF Æ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche EnergyÂ
Avalanche CurrentÂ
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
760
31
36
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
âââ
0.50
âââ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Starting TJ = 25°C, L = 4.3mH, RG = 25â¦,
IAS = 31A,
 ISD ⤠31A, di/dt ⤠TBDA/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
2
 Pulse width ⤠400µs; duty cycle ⤠2%.
Max.
0.35
âââ
58
Units
°C/W
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