IRFBA31N50L Datasheet, PDF (1/3 Pages) International Rectifier – HEXFET Power MOSFET

PD- 93925
PROVISIONAL _IRFBA31N50L
SMPS MOSFET
Applications
l Telecom and Data-Com off-Line SMPS
l Motor Control
l UninterruptIble Power Supply
Benefits
l Low On-Resistance
l High Speed Switching
l Low Gate Drive Current Due to Improved
Gate Charge Characteristics
l Built in Fast Recovery Diode
l Improved Avalanche Ruggedness and
Dynamic dv/dt, Fully Characterized
Avalanche Voltage and Current
V_DSS
500V
HEXFET^® Power MOSFET
R_DS(on)
I_D
0.152Ω
31A
Super-220™
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Recommended clip force
Max.
31
19
124
360
2.9
± 30
5.0
-55 to + 150
300
20
Units
A
W
W/°C
V
V/ns
°C
N
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 31
A ^{showing the}
integral reverse
G
––– ––– 124
p-n junction diode.
S
––– ––– 1.5 V T_J = 25°C, I_S = 31A, V_GS = 0V „
––– 180 ––– ns T_J = 125°C, I_F = 31A
––– 800 ––– nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Typical SMPS Topologies
l Zero Voltage Switching Full and Half Bridge Circuits
www.irf.com
1
6/2/00