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| IRFB52N15DPBF Datasheet, PDF (2/12 Pages) International Rectifier – HEXFET Power MOSFET | |||
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PROVISIONAL
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
150
âââ
âââ
3.0
âââ
âââ
âââ
âââ
âââ âââ
0.16 âââ
âââ 32
âââ 5.0
âââ 25
âââ 250
âââ 100
âââ -100
V
V/°C
mâ¦
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 36A Â
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
19 âââ âââ S VDS = 50V, ID = 36A
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
âââ 60 89
âââ 18 27
ID = 36A
nC VDS = 75V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
âââ 28 42
âââ 16 âââ
VGS = 10V, Â
VDD = 75V
tr
td(off)
Rise Time
Turn-Off Delay Time
âââ 47 âââ ns ID = 36A
âââ 28 âââ
RG = 2.5â¦
tf
Fall Time
Ciss
Input Capacitance
âââ 25 âââ
âââ 2770 âââ
VGS = 10V Â
VGS = 0V
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
âââ 590 âââ
VDS = 25V
âââ 110 âââ pF Æ = 1.0MHz
Coss
Output Capacitance
Coss
Output Capacitance
âââ 3940 âââ
âââ 260 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 120V, Æ = 1.0MHz
Coss eff. Effective Output Capacitance
âââ 550 âââ
VGS = 0V, VDS = 0V to 120V Â
Avalanche Characteristics
Parameter
EAS
dh Single Pulse Avalanche Energy
IAR
ÃÂ Avalanche Current
EAR
 Repetitive Avalanche Energy
 VDS (Avalanche) Repetitive Avalanche Voltage
Min.
âââ
âââ
âââ
200
Typ.
âââ
âââ
450
âââ
Max.
470
36
âââ
âââ
Units
mJ
A
mJ
V
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ÂÂ
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 60
A showing the
âââ âââ 240
integral reverse
G
p-n junction diode.
S
âââ âââ 1.5 V TJ = 25°C, IS = 36A, VGS = 0V Â
âââ 140 210 nS TJ = 25°C, IF = 36A
âââ 780 1170 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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