IRFB52N15DPBF Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET Power MOSFET

PROVISIONAL
SMPS MOSFET
PD - 97002
IRFB52N15DPbF
IRFS52N15DPbF
IRFSL52N15DPbF
HEXFET^® Power MOSFET
Applications
Key Parameters
l High frequency DC-DC converters
l Plasma Display Panel
l Lead-Free
V_DS
V_{DS (Avalanche)} min.
150
200
R_DS(ON) max @ 10V
32
V
V
m:
Benefits
T_J max
l Low Gate-to-Drain Charge to Reduce
175
°C
Switching Losses
l Fully Characterized Capacitance Including
Effective C_OSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
D²Pak
TO-262
IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V ‡
Continuous Drain Current, V_GS @ 10V ‡
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation ‡
Linear Derating Factor ‡
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Max.
51*
36*
240
3.8
230*
1.5*
± 30
5.5
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
R_θJC
R_θCS
R_θJA
R_θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface †
Junction-to-Ambient†
Junction-to-Ambient‡
Typ.
–––
0.50
–––
–––
Max.
0.47*
–––
62
40
Units
°C/W
* R_θJC (end of life) for D²Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes  through ‡ are on page 11
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1
05/17/05