IRFB4321PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

IRFB4321PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on)
V_GS(th)
I_DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
R_G(int)
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
150
–––
–––
–––
150
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––– V V_GS = 0V, I_D = 250μA
d ––– mV/°C Reference to 25°C, I_D = 1mA
f 15 _mΩ V_GS = 10V, I_D = 33A
3.0 ––– 5.0 V V_DS = V_GS, I_D = 250μA
––– ––– 20 μA V_DS = 150V, V_GS = 0V
––– ––– 1.0 mA V_DS = 150V, V_GS = 0V, T_J = 125°C
––– ––– 100 nA V_GS = 20V
––– ––– -100
V_GS = -20V
––– 0.8 ––– Ω
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Q_g
Total Gate Charge
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
t_d(on)
Turn-On Delay Time
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
130 ––– –––
––– 71 110
––– 24 –––
––– 21 –––
––– 18 –––
––– 60 –––
––– 25 –––
––– 35 –––
––– 4460 –––
––– 390 –––
––– 82 –––
S V_DS = 25V, I_D = 50A
nC I_D = 50A
f ^{VDS = 75V}
V_GS = 10V
ns V_DD = 98V
I_D = 50A
f ^{RG = 2.5Ω}
V_GS = 10V
pF V_GS = 0V
V_DS = 50V
ƒ = 1.0MHz
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ãd (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
™ ^{Min. Typ. Max. Units}
Conditions
––– ––– ⁸⁵
A MOSFET symbol
D
showing the
––– ––– 330 A integral reverse
G
––– ––– 1.3
f ^{p-n junction diode.}
V T_J = 25°C, I_S = 50A, V_GS = 0V
S
––– 89 130 ns I_D = 50A
f ^{––– 300 450 nC VR = 128V,}
––– 6.5 ––– A ^{di/dt = 100A/μs}
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.095mH
R_G = 25Ω, I_AS = 50A, V_GS =10V. Part not recommended for use
above this value.
„ Pulse width ≤ 400μs; duty cycle ≤ 2%.
… R_θ is measured at T_J approximately 90°C
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