IRFB4321PBF_15 Datasheet, PDF (1/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

PD - 97103B
IRFB4321PbF
Applications
l Motion Control Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l Hard Switched and High Frequency Circuits
Benefits
l Low R_DSON Reduces Losses
l Low Gate Charge Improves the Switching
Performance
l Improved Diode Recovery Improves Switching &
EMI Performance
l 30V Gate Voltage Rating Improves Robustness
l Fully Characterized Avalanche SOA
V_DSS
R_DS(on)
I_D
typ.
max.
D
G
S
HEXFET^® Power MOSFET
150V
12m:
15m:
85A
D
S
D
G
TO-220AB
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
V_GS
E_{AS (Thermally limited)}
T_J
T_STG
Gate-to-Source Voltage
Single Pulse Avalanche Energy e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
R_θJC
R_θCS
R_θJA
Parameter
Junction-to-Case g
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient g
Max.
85 c
60
330
350
2.3
±30
120
-55 to + 175
300
10lbxin (1.1Nxm)
Typ.
–––
0.50
–––
Max.
0.43
–––
62
Units
A
W
W/°C
V
mJ
°C
Units
°C/W
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