|
IRFB4321GPBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFETPower MOSFET | |||
|
◁ |
IRFB4321GPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
RG(int)
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
150
âââ
âââ
âââ
150
12
âââ V VGS = 0V, ID = 250µA
d âââ mV/°C Reference to 25°C, ID = 1mA
f 15 m⦠VGS = 10V, ID = 33A
3.0 âââ 5.0 V VDS = VGS, ID = 250µA
âââ âââ 20 µA VDS = 150V, VGS = 0V
âââ âââ 1.0 mA VDS = 150V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
âââ 0.8 âââ â¦
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
130 âââ âââ
âââ 71 110
âââ 24 âââ
âââ 21 âââ
âââ 18 âââ
âââ 60 âââ
âââ 25 âââ
âââ 35 âââ
âââ 4460 âââ
âââ 390 âââ
âââ 82 âââ
S VDS = 25V, ID = 50A
nC ID = 50A
f VDS = 75V
VGS = 10V
ns VDD = 75V
ID = 50A
f RG = 2.5â¦
VGS = 10V
pF VGS = 0V
VDS = 25V
Æ = 1.0MHz
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ãd (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
 Min. Typ. Max. Units
Conditions
âââ âââ 83
A MOSFET symbol
D
showing the
âââ âââ 330 A integral reverse
G
âââ âââ 1.3
f p-n junction diode.
V TJ = 25°C, IS = 50A, VGS = 0V
S
âââ 89 130 ns ID = 50A
f âââ 300 450 nC VR = 128V,
âââ 6.5 âââ A di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable
junction temperature.
 Repetitive rating; pulse width limited by max. junction
temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.095mH
RG = 25â¦, IAS = 50A, VGS =10V. Part not recommended for use
above this value.
 Pulse width ⤠400µs; duty cycle ⤠2%.
Â
Rθ is measured at TJ approximately 90°C
2
www.irf.com
|
▷ |