IRFB4321GPBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFETPower MOSFET

PD - 96215
IRFB4321GPbF
Applications
l Motion Control Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l Hard Switched and High Frequency Circuits
Benefits
l Low R_DSON Reduces Losses
l Low Gate Charge Improves the Switching
Performance
l Improved Diode Recovery Improves Switching &
EMI Performance
l 30V Gate Voltage Rating Improves Robustness
l Fully Characterized Avalanche SOA
l Lead-Free
l Halogen-Free
V_DSS
R_DS(on)
I_D
typ.
max.
D
G
S
HEXFET^® Power MOSFET
150V
12m:
15m:
83A
D
DS
G
TO-220AB
IRFB4321GPbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
d Pulsed Drain Current
P_D @T_C = 25°C _{Maximum Power Dissipation}
Linear Derating Factor
V_GS
E_{AS (Thermally limited)}
e ^{Gate-to-Source Voltage}
Single Pulse Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
R_θJC
R_θCS
R_θJA
g^Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
83 c
59
330
330
2.2
±30
120
-55 to + 175
300
x x 10lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
A
W
W/°C
V
mJ
°C
Units
°C/W
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1
01/06/09