IRFB3407ZPBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – Battery Management

IRFB3407ZPbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on)
V_GS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
75 ––– –––
––– 0.094 –––
––– 5.0 6.4
2.0 ––– 4.0
V V_GS = 0V, I_D = 250μA
d V/°C Reference to 25°C, I_D = 5mA
g _mΩ V_GS = 10V, I_D = 75A
V V_DS = V_GS, I_D = 150μA
R_G(int)
I_DSS
I_GSS
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– 0.70 –––
––– ––– 20
––– ––– 250
––– ––– 100
––– ––– -100
Ω
μA V_DS = 75V, V_GS = 0V
V_DS = 75V, V_GS = 0V, T_J = 125°C
nA V_GS = 20V
V_GS = -20V
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Q_g
Q_gs
Q_gd
Q_sync
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss eff. (ER)
C_oss eff. (TR)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q_g - Q_gd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
320 ––– –––
––– 79 110
––– 19 –––
––– 24 –––
––– 55 –––
––– 15 –––
––– 64 –––
––– 38 –––
––– 65 –––
––– 4750 –––
––– 420 –––
––– 190 –––
––– 440 –––
––– 410 –––
S V_DS = 50V, I_D = 75A
I_D = 75A
g ^nC
V_DS = 38V
V_GS = 10V
I_D = 75A, V_DS =0V, V_GS = 10V
V_DD = 49V
ns
I_D = 75A
g ^{RG = 2.6Ω}
V_GS = 10V
V_GS = 0V
V_DS = 50V
pF ƒ = 1.0MHz
i V_GS = 0V, V_DS = 0V to 60V
h V_GS = 0V, V_DS = 0V to 60V
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ãdi (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™ ––– ––– 120
MOSFET symbol
D
showing the
––– ––– 488 ^A integral reverse
G
––– ––– 1.3
p-n junction diode.
S
g V T_J = 25°C, I_S = 75A, V_GS = 0V
––– 33 50 ns T_J = 25°C
V_R = 64V,
––– 39 59
T_J = 125°C
––– 42 63 nC T_J = 25°C
g ^{IF = 75A}
di/dt = 100A/μs
––– 56 84
T_J = 125°C
––– 2.2 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.050mH
R_G = 25Ω, I_AS = 75A, V_GS =10V. Part not recommended for use
above this value.
„ I_SD ≤ 75A, di/dt ≤ 1570A/μs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
… Pulse width ≤ 400μs; duty cycle ≤ 2%.
† C_oss eff. (TR) is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ R_θ is measured at T_J approximately 90°C.
2 www.irf.com © 2013 International Rectifier
March 15, 2013