IRFB3407ZPBF_15 Datasheet, PDF (1/8 Pages) International Rectifier – Battery Management

IRFB3407ZPbF
Applications
HEXFET^® Power MOSFET
l Battery Management
l High Speed Power Switching
D
V_DSS
R_DS(on) typ.
75V
5.0mΩ
l Hard Switched and High Frequency Circuits
G
max.
I_{D (Silicon Limited)}
c ^6.4mΩ
122A
Benefits
S
I_{D (Package Limited)}
120A
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
D
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
l Lead-Free
S
D
G
TO-220AB
IRFB3407ZPbF
G
Gate
D
Drain
S
Source
Ordering Information
Base part number
IRFB3407ZPbF
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Complete Part Number
IRFB3407ZPbF
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
d ^{Continuous Drain Current, VGS @ 10V (Wire Bond Limited)}
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
e E_{AS (Thermally limited)} Single Pulse Avalanche Energy
Ãd I_AR
Avalanche Current
d E_AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
Parameter
j Junction-to-Case
R_θCS
Case-to-Sink, Flat Greased Surface , TO-220
R_θJA
Junction-to-Ambient, TO-220
Max.
™ 122
86
120
488
230
1.5
± 20
6.7
-55 to + 175
300
x x 10lbf in (1.1N m)
140
See Fig. 14, 15, 21a, 21b
Typ.
–––
0.50
–––
Max.
0.65
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1 www.irf.com © 2013 International Rectifier
March 15, 2013