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IRFB3307PBF Datasheet, PDF (2/12 Pages) International Rectifier – HEXFETPower MOSFET | |||
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IRFB3307/IRFS3307/IRFSL3307
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Gate Input Resistance
75 âââ âââ
âââ 0.069 âââ
âââ 5.0 6.3
V VGS = 0V, ID = 250µA
d V/°C Reference to 25°C, ID = 1mA
g m⦠VGS = 10V, ID = 75A
2.0 âââ 4.0 V VDS = VGS, ID = 150µA
âââ âââ 20 µA VDS = 75V, VGS = 0V
âââ âââ 250
VDS = 75V, VGS = 0V, TJ = 125°C
âââ âââ 200 nA VGS = 20V
âââ âââ -200
VGS = -20V
âââ 1.5 âââ ⦠f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
98 âââ âââ
Qg
Total Gate Charge
âââ 120 180
Qgs
Gate-to-Source Charge
âââ 35 âââ
Qgd
Gate-to-Drain ("Miller") Charge
âââ 46 âââ
td(on)
Turn-On Delay Time
âââ 26 âââ
tr
td(off)
Rise Time
Turn-Off Delay Time
âââ 120 âââ
âââ 51 âââ
tf
Fall Time
âââ 63 âââ
Ciss
Input Capacitance
âââ 5150 âââ
Coss
Output Capacitance
âââ 460 âââ
Crss
Reverse Transfer Capacitance
âââ 250 âââ
Coss eff. (ER) Effective Output Capacitance (Energy Related) âââ 570 âââ
h Coss eff. (TR) Effective Output Capacitance (Time Related) âââ 700 âââ
S VDS = 50V, ID = 75A
nC ID = 75A
g VDS = 60V
VGS = 10V
ns VDD = 48V
ID = 75A
g RG = 3.9â¦
VGS = 10V
pF VGS = 0V
VDS = 50V
Æ = 1.0MHz
i VGS = 0V, VDS = 0V to 60V , See Fig.11
h VGS = 0V, VDS = 0V to 60V , See Fig. 5
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ãd (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
 âââ âââ 130 A MOSFET symbol
D
showing the
âââ âââ 510 A integral reverse
G
âââ âââ 1.3
p-n junction diode.
S
g V TJ = 25°C, IS = 75A, VGS = 0V
âââ 38 57 ns TJ = 25°C
VR = 64V,
âââ 46 69
TJ = 125°C
âââ 65 98 nC TJ = 25°C
g IF = 75A
di/dt = 100A/µs
âââ 86 130
TJ = 125°C
âââ 2.8 âââ A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction  Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A.
 Repetitive rating; pulse width limited by max. junction
temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.096mH
RG = 25â¦, IAS = 75A, VGS =10V. Part not recommended for use
above this value.
 ISD ⤠75A, di/dt ⤠530A/µs, VDD ⤠V(BR)DSS, TJ ⤠175°C.
Â
Pulse width ⤠400µs; duty cycle ⤠2%.
as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
 Rθ is measured at TJ approximately 90°C.
2
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