IRFB3307PBF Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET

Power MOSFET

Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
G
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
PD - 96901C
IRFB3307
IRFS3307
IRFSL3307
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
S ^ID
75V
5.0m:
6.3m:
130A
GDS
TO-220AB
IRFB3307
GDS
D²Pak
IRFS3307
GDS
TO-262
IRFSL3307
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
d ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
e E_{AS (Thermally limited)} Single Pulse Avalanche Energy
Ù I_AR
Avalanche Current
g E_AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
Parameter
k Junction-to-Case
R_θCS
R_θJA
R_θJA
Case-to-Sink, Flat Greased Surface , TO-220
k Junction-to-Ambient, TO-220
jk Junction-to-Ambient (PCB Mount) , D²Pak
www.irf.com
Max.
™ 130
91™
510
250
1.6
± 20
11
-55 to + 175
300
x x 10lb in (1.1N m)
270
See Fig. 14, 15, 16a, 16b
Typ.
–––
0.50
–––
–––
Max.
0.61
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
01/20/06