IRFB3207ZPBF Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET Power MOSFET

IRFB/S/SL3207ZPbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
75 ––– –––
––– 0.091 –––
––– 3.3 4.1
2.0 ––– 4.0
V V_GS = 0V, I_D = 250µA
V/°C Reference to 25°C, I_D = 5mAd
mΩ ^VGS ^{= 10V, I}D ^{= 75A g}
V V_DS = V_GS, I_D = 150µA
R_G(int)
I_DSS
I_GSS
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– 0.80 –––
––– ––– 20
––– ––– 250
––– ––– 100
––– ––– -100
Ω
µA V_DS = 75V, V_GS = 0V
V_DS = 75V, V_GS = 0V, T_J = 125°C
nA V_GS = 20V
V_GS = -20V
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Q_g
Q_gs
Q_gd
Q_sync
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q_g - Q_gd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
280 ––– –––
––– 120 170
––– 27 –––
––– 33 –––
––– 87 –––
––– 20 –––
––– 68 –––
––– 55 –––
––– 68 –––
––– 6920 –––
––– 600 –––
––– 270 –––
S V_DS = 50V, I_D = 75A
nC I_D = 75A
V_DS = 38V
V_GS = 10V g
I_D = 75A, V_DS =0V, V_GS = 10V
ns V_DD = 49V
I_D = 75A
R_G = 2.7Ω
V_GS = 10V g
pF V_GS = 0V
V_DS = 50V
ƒ = 1.0MHz
C_oss eff. (ER) _{Effective Output Capacitance (Energy Related)i} ––– 770 –––
C_oss eff. (TR) _{Effective Output Capacitance (Time Related)h} ––– 960 –––
V_GS = 0V, V_DS = 0V to 60V j
V_GS = 0V, V_DS = 0V to 60V h
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) di
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 170c A MOSFET symbol
D
showing the
––– ––– 670
integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V T_J = 25°C, I_S = 75A, V_GS = 0V g
––– 36 54 ns T_J = 25°C
V_R = 64V,
––– 41 62
T_J = 125°C
––– 50 75 nC T_J = 25°C
I_F = 75A
di/dt = 100A/µs g
––– 67 100
T_J = 125°C
––– 2.4 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction † C_oss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.065mH
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
R_G = 25Ω, I_AS = 75A, V_GS =10V. Part not recommended for use
above this value.
mended footprint and soldering techniques refer to application note #AN-994.
‰ R_θ is measured at T_J approximately 90°C.
„ I_SD ≤ 75A, di/dt ≤ 1730A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
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