IRFB3207ZPBF Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET Power MOSFET

Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
PD - 97213
IRFB3207ZPbF
IRFS3207ZPbF
IRFSL3207ZPbF
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max
S ^I_D
75V
3.3m:
4.1m:
170A
D
D
D
S
D
G
TO-220AB
IRFB3207ZPbF
G
Gate
S
G
D²Pak
IRFS3207ZPbF
S
D
G
TO-262
IRFSL3207ZPbF
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)} ^{Single Pulse Avalanche Energy e}
I_AR
Avalanche Current c
E_AR
Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
R_θJC
Junction-to-Case k
R_θCS
Case-to-Sink, Flat Greased Surface , TO-220
R_θJA
Junction-to-Ambient, TO-220 k
R_θJA
Junction-to-Ambient (PCB Mount) , D²Pak jk
Max.
170c
120c
670
300
2.0
± 20
16
-55 to + 175
300
10lbxin (1.1Nxm)
180
75
30
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
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1
05/29/06