IRFB3077PBF Datasheet, PDF (2/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

IRFB3077PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
Gate Threshold Voltage
I_DSS
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Gate Input Resistance
Min. Typ. Max. Units
Conditions
75 ––– –––
––– 0.091 –––
––– 2.8 3.3
V V_GS = 0V, I_D = 250µA
V/°C Reference to 25°C, I_D = 5mAd
mΩ V_GS = 10V, I_D = 75A g
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
––– ––– 20 µA V_DS = 75V, V_GS = 0V
––– ––– 250
V_DS = 75V, V_GS = 0V, T_J = 125°C
––– ––– 100 nA V_GS = 20V
––– ––– -100
V_GS = -20V
––– 1.2 ––– Ω f = 1MHz, open drain
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
160 ––– –––
Q_g
Total Gate Charge
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
t_d(on)
Turn-On Delay Time
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
C_iss
Input Capacitance
––– 160 220
––– 37 –––
––– 42 –––
––– 25 –––
––– 87 –––
––– 69 –––
––– 95 –––
––– 9400 –––
C_oss
Output Capacitance
––– 820 –––
C_rss
Reverse Transfer Capacitance
––– 350 –––
C_oss eff. (ER) Effective Output Capacitance (Energy Related)i ––– 1090 –––
C_oss eff. (TR) Effective Output Capacitance (Time Related)h ––– 1260 –––
S V_DS = 50V, I_D = 75A
nC I_D = 75A
V_DS = 38V
V_GS = 10V g
ns V_DD = 38V
I_D = 75A
R_G = 2.1Ω
V_GS = 10V g
pF V_GS = 0V
V_DS = 50V
ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 60V j, See Fig.11
V_GS = 0V, V_DS = 0V to 60V h, See Fig. 5
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) di
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 210c A MOSFET symbol
D
showing the
––– ––– 850
integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V T_J = 25°C, I_S = 75A, V_GS = 0V g
––– 42 63 ns T_J = 25°C
V_R = 64V,
––– 50 75
T_J = 125°C
––– 59 89 nC T_J = 25°C
I_F = 75A
di/dt = 100A/µs g
––– 86 130
T_J = 125°C
––– 2.5 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction † C_oss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.08mH
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
R_G = 25Ω, I_AS = 75A, V_GS =10V. Part not recommended for use
mended footprint and soldering techniques refer to application note #AN-994.
above this value.
‰ R_θ is measured at T_J approximately 90°C
„ I_SD ≤ 75A, di/dt ≤ 400A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
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