IRFB3077PBF Datasheet, PDF (1/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

PD - 97047
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
G
l Worldwide Best R_DS(on) in TO-220
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
IRFB3077PbF
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
S ^I_D
75V
2.8m:
3.3m:
210A
D
S
D
G
TO-220AB
IRFB3077PbF
G
G ate
D
D ra in
S
S ource
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
V_GS
dV/dt
Gate-to-Source Voltage
Peak Diode Recovery f
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)} ^{Single Pulse Avalanche Energy e}
I_AR
Avalanche Current c
E_AR
Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
R_θJC
Junction-to-Case k
R_θCS
Case-to-Sink, Flat Greased Surface
R_θJA
Junction-to-Ambient jk
Max.
210c
150 c
850
370
2.5
± 20
2.5
-55 to + 175
300
10lbxin (1.1Nxm)
240
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
Max.
0.402
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
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1
10/24/05