IRFB3006GPBF Datasheet, PDF (2/8 Pages) International Rectifier –
High Efficiency Synchronous Rectification in SMPS

IRFB3006GPbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
I_DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Internal Gate Resistance
60
–––
–––
–––
0.07
2.1
–––
–––
2.5
V V_GS = 0V, I_D = 250µA
d V/°C Reference to 25°C, I_D = 5mA
g mΩ V_GS = 10V, I_D = 170A
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
––– ––– 20 µA V_DS = 60V, V_GS = 0V
––– ––– 250
V_DS = 60V, V_GS = 0V, T_J = 125°C
––– ––– 100 nA V_GS = 20V
––– ––– -100
V_GS = -20V
––– 2.0 ––– Ω
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
280 ––– –––
Q_g
Total Gate Charge
––– 200 300
Q_gs
Gate-to-Source Charge
––– 37 –––
Q_gd
Gate-to-Drain ("Miller") Charge
––– 60
Q_sync
Total Gate Charge Sync. (Q_g - Q_gd)
––– 140 –––
t_d(on)
Turn-On Delay Time
––– 16 –––
t_r
Rise Time
––– 182 –––
t_d(off)
Turn-Off Delay Time
––– 118 –––
t_f
Fall Time
––– 189 –––
C_iss
Input Capacitance
––– 8970 –––
C_oss
Output Capacitance
––– 1020 –––
C_rss
Reverse Transfer Capacitance
––– 534 –––
C_oss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1480 –––
h Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 1920 –––
S V_DS = 25V, I_D = 170A
nC I_D = 170A
g ^{VDS =30V}
V_GS = 10V
I_D = 170A, V_DS =0V, V_GS = 10V
ns V_DD = 39V
I_D = 170A
g ^{RG = 2.7Ω}
V_GS = 10V
pF V_GS = 0V
V_DS = 50V
ƒ = 1.0 MHz, See Fig. 5
i V_GS = 0V, V_DS = 0V to 48V , See Fig. 11
h V_GS = 0V, V_DS = 0V to 48V
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ãd (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™ ––– ––– 270 A MOSFET symbol
D
showing the
––– ––– 1080 A integral reverse
G
p-n junction diode.
S
g ––– ––– 1.3 V T_J = 25°C, I_S = 170A, V_GS = 0V
––– 44 ––– ns T_J = 25°C
V_R = 51V,
––– 48 –––
T_J = 125°C
––– 63 ––– nC T_J = 25°C
g ^{IF = 170A}
di/dt = 100A/µs
––– 77 –––
T_J = 125°C
––– 2.4 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction „ I_SD ≤ 170A, di/dt ≤ 1360A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
temperature. Bond wire current limit is 195A. Note that current
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
limitations arising from heating of the device leads may occur with † C_oss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. (Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.022mH
R_G = 25Ω, I_AS = 170A, V_GS =10V. Part not recommended for use
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ R_θ is measured at T_J approximately 90°C.
above this value .
2
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