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| IRFB17N50L Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A) | |||
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IRFB17N50L
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
500 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.6 âââ V/°C Reference to 25°C, ID = 1mAÂ
âââ 0.28 0.32 ⦠VGS = 10V, ID = 9.9A Â
3.0 âââ 5.0 V VDS = VGS, ID = 250µA
âââ âââ 50 µA VDS = 500V, VGS = 0V
âââ âââ 2.0 mA VDS = 400V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
11 âââ âââ S VDS = 50V, ID = 9.9A
âââ âââ 130
ID = 16A
âââ âââ 33
âââ âââ 59
nC VDS = 400V
VGS = 10V Â
âââ 21 âââ
VDD = 250V
âââ 51 âââ ns ID = 16A
âââ 50 âââ
RG = 7.5â¦
âââ 28 âââ
VGS = 10V Â
âââ 2760 âââ
VGS = 0V
âââ 325 âââ
VDS = 25V
âââ 37 âââ pF Æ = 1.0MHz
âââ 3690 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
âââ 84 âââ
âââ 159 âââ
VGS = 0V, VDS = 400V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 400V Â
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche EnergyÂ
Avalanche CurrentÂ
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
390
16
22
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
âââ
0.50
âââ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Starting TJ = 25°C, L = 3.0mH, RG = 25â¦,
IAS = 16A.
 ISD ⤠16A, di/dt ⤠347A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
2
 Pulse width ⤠300µs; duty cycle ⤠2%.
Max.
0.56
âââ
62
Units
°C/W
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