IRFB17N50L Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A)

PD - 94084A
IRFB17N50L
SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
V_DSS
l High Speed Power Switching
l ZVS and High Frequency Circuit
500V
l PWM Inverters
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
l Low Trr and Soft Diode Recovery
l High Performance Optimised Anti-parallel Diode
HEXFET^® Power MOSFET
R_DS(on) typ.
I_D
0.28Ω
16A
TO-220AB
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Max.
16
11
64
220
1.8
± 30
13
-55 to + 150
300
Units
A
W
W/°C
V
V/ns
°C
Mounting Torque, 6-32 or M3 screw
10
lbft.in(N.m)
Diode Characteristics
Symbol
I_S
I_SM
V_SD
t_rr
Q_rr
I_RRM
t_on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
16
MOSFET symbol
D
––– –––
A ^{showing the}
64
integral reverse
G
––– –––
p-n junction diode.
S
––– ––– 1.5 V T_J = 25°C, I_S = 16A, V_GS = 0V „
––– 170 250
––– 220 330
ns
T_J = 25°C
T_J = 125°C
I_F = 16A
di/dt = 100A/µs „
––– 470 710 _nC T_J = 25°C
––– 810 1210
T_J = 125°C
––– 7.3 11 A
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Typical SMPS Topologies
l Bridge Converters
l All Zero Voltage Switching
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1
3/28/01