IRF9Z30PBF Datasheet, PDF (2/7 Pages) International Rectifier – HEXFET POWER MOSFET

IRF9Z30PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
BV_DSS Drain-to-Source Breakdown Voltage
V_GS(th) Gate Threshold Voltage
I_GSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
I_DSS Drain-to-Source Leakage Current
I_D(on) On- State Drain Current
R_DS(on) Static Drain-to-Source On-Resistance
g_fs
Forward Transconductance
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
t_d(on) Turn-On Delay Time
t_r
Rise Time
t_d(off) Turn-Off Delay Time
t_f
Fall Time
Q_g
Total Gate Charge (Gate -Source Plus Gate-Drain)
Q_gs Post-Vth Gate-to-Source Charge
Q_gd Gate-to-Drain Charge
L_D
Internal Drain Inductance
Min. Typ. Max. Units
Conditions
-50 ––– ––– V VGS = 0V, ID = -250µA
-2.0 ––– -4.0 V V_DS = V_GS, I_D = -250µA
––– ––– -500 _nA V_GS = -20V
––– ––– 500
V_GS = 20V
––– ––– -250 _µA V_DS = Max. Rating, V_GS = 0V
––– ––– -1000
V_DS = Max. Rating x 0.8, V_GS = 0V, T_J = 125°C
-18 ––– ––– ^{A V}DS ^{> I}D(on) ^{X R}DS(ON) ^{(max)., V}GS ^{= -10V}
––– 0.093 0.14 ^{Ω V}GS ^{= -10V, I}D ^{= -9.3A}
3.1 4.7 ––– S V_DS = 2 X V_GS, I_DS = -9.0A
––– 900 –––
V_GS = 0V
––– 570 ––– pF V_DS = -25V
––– 140 –––
ƒ = 1.0MHz,
See Fig.10
––– 12 18
––– 110 170
V_DD = -25V, ID = -18A, RG = 13Ω, RD = 1.3Ω
See Fig.16
––– 21 32 ns _{(MOSFET switching times are assentially independent}
––– 64 96
of operating temperature)
––– 26 39
VGS = -10V, ID = -18A, V_DS = 0.8 Max. Rating
––– 6.9 10 nC _{See Fig.17 for test circuit (Gate charge is essentially}
––– 9.7 15
independent of operating temperature.)
Measured from the drain
Modified MOSFET symbol
––– 4.5 –––
lead, 6mm (0.25 in.) from
showing
L_S
Internal Source Inductance
nH ^{package to center of die.}
Measured from the source
––– 7.5 –––
lead, 6mm (0.25 in.) from
the internal
device
inductances.
package to source bonding pad.
Source-Drain Diode Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM Pulsed Source Current
(Body Diode)
V_SD Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr Reverse Recovery Charge
T_on Forward Turn-on Time
Note:
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– -18
showing the
A
integral reverse
––– ––– -60
p-n junction rectifier.
––– ––– -6.3 V T_J = 25°C, I_S = -18A, V_GS = 0V
54 120 250 ns T_J = 25°C, I_F = -18A
0.20 0.47 1.1 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L_S + L_D.
T_J = 25°C to 150°C
Repetitive Rating :Pulse width limited by max. junction tempeature. See Transient Thermal Impedance Curve (Fig.5).
@ V_dd = -25V, T_J= 25°C, L = 100µH, R_G = 25Ω.
Pulse Test : Pulse width ≤ 300ms, Duty Cycle ≤ 2%.
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