IRF9Z30PBF Datasheet, PDF (1/7 Pages) International Rectifier – HEXFET POWER MOSFET

PD- 96095
Features
P-Channel Verasatility
Compact Plastic Package
Fast Switching
Low Drive Current
Ease of Paralleling
Excellent Temperature Stability
Lead-Free
IRF9Z30PbF
HEXFET^® POWER MOSFET
Product Summary
Part Number V_DS(V)
IRF9Z30PbF
-50
R_DSON (Ω)
0.14
I_D (A)
-18
D
G
Description
S
TO-220AB
The HEXFET^® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient
geometry and unique processing of the HEXFET design achieve very low on-state resistence combined with high
transconductance and extreme device ruggedness.
The P-Channel HEXFETs are designed for applications which require the convenience of reverse polarity operation. They
retain all of the features of the more common N-Channel HEXFETs such as voltage control, very fast switching, ease of
paralleling, and excellent temperature stability.
P-Channel HEXFETs are intended for use in power stages where complementary symmetry with N-Channel devices offers
circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity
connection. Applications include motor control, audio amplifiers, switched mode converters, control circuit and pulse
amplifiers.
Absolute Maximum Ratings
V_DS
V_DGR
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Parameter
Drain-to-Source Voltage
Drain-to-Gate Voltage (R_GS =20KΩ)
Gate-to-Source Voltage
Continuous Drain Current, V_GS
Continuous Drain Current, V_GS
Pulsed Drain Current
Max. Power Dissipation
Max.
-50
-50
±20
-18
-11
-60
74
Units
V
A
W
I_LM
I_L
T_J
T_STG
Lead Temperature
Linear Derating Factor
Inductive Current, Clamped (L= 100µH) See Fig. 14
Unclamped Inductive Current(Avalanche Current)
See Fig. 15
Operating Junction and
Storage Temperature Range
300 (0.063 in. (1.6mm) from case for 10s)
0.59
-60
-3.1
-55 to + 150
W/°C
A
°C
Thermal Resistance
Parameter
R_θJC
Junction-to-Case
R_θCS
Case-to-Sink, Flat, Greased Surface
R_θJA
Junction-to-Ambient
www.irf.com
Typ.
–––
1.0
–––
Max.
1.7
–––
80
Units
°C/W
1
03/27/07