IRF9389PBF Datasheet, PDF (2/14 Pages) International Rectifier – High and Low Side Switches for Inverter

IRF9389PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
Drain-to-Source Breakdown Voltage N-Ch 30
P-Ch -30
 VDSS/ TJ Breakdown Voltage Temp. Coefficient N-Ch –––
P-Ch –––
N-Ch –––
RDS (on)
Static Drain-to-Source On-Resistance
–––
P-Ch –––
–––
VGS (th)
Gate Threshold Voltage
N-Ch 1.3
P-Ch -1.3
N-Ch –––
IDSS
Drain-to-Source Leakage Current
P-Ch –––
N-Ch –––
P-Ch –––
IGSS
Gate-to-Source Forward Leakage
N-Ch –––
P-Ch –––
Gate-to-Source Reverse Leakage
N-Ch –––
P-Ch –––
gfs
Forward Transconductance
N-Ch 8.2
P-Ch 4.1
Qg
Total Gate Charge
N-Ch –––
P-Ch –––
Q gs
Gate-to-Source Charge
N-Ch –––
P-Ch –––
Q gd
Gate-to-Drain ("Miller") Charge
N-Ch –––
P-Ch –––
RG
Gate Resistance
N-Ch –––
P-Ch –––
td(on)
Turn-On Delay Time
N-Ch –––
P-Ch –––
tr
Rise Time
N-Ch –––
P-Ch –––
td(off)
Turn-Off Delay Time
N-Ch –––
P-Ch –––
tf
Fall Time
N-Ch –––
P-Ch –––
Ciss
Input Capacitance
N-Ch –––
P-Ch –––
Coss
Output Capacitance
N-Ch –––
P-Ch –––
Crss
Reverse Transfer Capacitance
N-Ch –––
P-Ch –––
Diode Characteristics
Parameter
Min.
IS
Continuous Source Current (Body DiodeN-Ch –––
P-Ch –––
IS M
Pulsed Source Current (Body Diode) N-Ch –––
P-Ch –––
VSD
Diode Forward Voltage
N-Ch –––
P-Ch –––
trr
Reverse Recovery Time
N-Ch –––
P-Ch –––
Q rr
Reverse Recovery Charge
N-Ch –––
P-Ch –––
Typ.
–––
–––
0.03
0.02
22
33
51
82
1.8
-1.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.8
8.1
1.4
1.3
0.98
2.1
2.2
9.4
5.1
8.0
4.8
14
4.9
17
3.9
15
398
383
82
104
36
64
Typ.
–––
–––
–––
–––
–––
–––
8.4
11
2.3
4.8
Max.
–––
–––
–––
–––
27
40
64
103
2.3
-2.3
1.0
-1.0
150
-150
100
-100
-100
100
–––
–––
14
16
–––
–––
–––
–––
4.4
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
V/°C
m
m
VGS = 0V, ID = 250μA
VGS = 0V, ID = -250μA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
d VGS = 10V, ID = 6.8A
d VGS = 4.5V, ID = 5.4A
d VGS = -10V, ID = -4.6A
d VGS = -4.5V, ID = -3.7A
V VDS = VGS, ID = 10μA
VDS = VGS, ID = -10μA
μA VDS = 24V, VGS = 0V
VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VDS = -24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
VGS = -20V
VGS = 20V
S VDS = 15V, ID = 5.4A
VDS = -15V, ID = -3.7A
nC N-Channel
VGS = 10V, VDS = 15V, ID = 6.8A
P-Channel
VGS = -10V, VDS = -15V, ID = -4.6A

d ns N-Channel
VDD = 15V, VGS = 4.5V
ID = 1.0A, RG = 6.2
P-Channel
d VDD = -15V, VGS = -4.5V
ID = -1.0A, RG = 6.8
pF N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0KHz
Max.
2.0
-2.0
34
-23
1.2
-1.2
13
17
3.5
7.2
Units
A
Conditions
V
d T_J = 25°C, I_S = 2.0A, V_GS = 0V
d T_J = 25°C, I_S = -2.0A, V_GS = 0V
d ns N-Channel: TJ = 25°C, IF = 2.0A,
VDD = 15V, di/dt = 102/μs
d nC P-Channel: TJ = 25°C, IF = -2.0A,
VDD = -15V, di/dt = 102/μs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 16)
‚ Pulse width 400μs; duty cycle 2%.
ƒ Surface mounted on 1 in square Cu board
„ R is measured at TJ approximately 90°C
2
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January 14, 2013